Discrete Semiconductor Products

HER305G-TP

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DIODE GEN PURP 400V 3A DO201AD

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Discrete Semiconductor Products

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DIODE GEN PURP 400V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	HER305G-TP

Capacitance @ Vr, F	80 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Current - Reverse Leakage @ Vr	Package / Case	Current - Average Rectified (Io)	Speed	Reverse Recovery Time (trr)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Voltage - Forward (Vf) (Max) @ If
Micro Commercial Components HER305G-TP	10 µA	DO-201AD Axial	3 A	200 mA 500 ns	50 ns	DO-201AD	400 V	Through Hole	80 pF	150 °C	-55 °C	Standard	1.3 V
Micro Commercial Components HER305G-AP	10 µA	DO-201AD Axial	3 A	200 mA 500 ns	50 ns	DO-201AD	400 V	Through Hole	80 pF	150 °C	-55 °C	Standard	1.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 3A Through Hole DO-201AD

Technical documentation and resources