Zenode.ai Logo
Beta
16 SOIC
Integrated Circuits (ICs)

TPS2063DG4

Unknown
Texas Instruments

IC PWR SWTCH N-CH 1:2/1:1 16SOIC

Deep-Dive with AI

Search across all available documentation for this part.

16 SOIC
Integrated Circuits (ICs)

TPS2063DG4

Unknown
Texas Instruments

IC PWR SWTCH N-CH 1:2/1:1 16SOIC

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTPS2063DG4
Current - Output (Max) [Max]1 A
Fault ProtectionOver Temperature, UVLO, Current Limiting (Fixed)
FeaturesStatus Flag
Input TypeNon-Inverting
InterfaceOn/Off
Mounting TypeSurface Mount
Number of Outputs3
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Output ConfigurationHigh Side
Output TypeN-Channel
Package / Case16-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Ratio - Input:Output [custom]1:1, 1:2
Rds On (Typ)70 mOhm
Supplier Device Package16-SOIC
Switch TypeGeneral Purpose
Voltage - Load [Max]5.5 V
Voltage - Load [Min]2.7 V
Voltage - Supply (Vcc/Vdd)False

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 320$ 1.71

Description

General part information

TPS2063 Series

The TPS206x power-distribution switches are intended for applications where heavy capacitive loads and short-circuits are likely to be encountered. This device incorporates 70mΩ N-channel MOSFET power switches for power-distribution systems that require multiple power switches in a single package. Each switch is controlled by a logic enable input. Gate drive is provided by an internal charge pump designed to control the power-switch rise times and fall times to minimize current surges during switching. The charge pump requires no external components and allows operation from supplies as low as 2.7V.

The TPS206x power-distribution switches are intended for applications where heavy capacitive loads and short-circuits are likely to be encountered. This device incorporates 70mΩ N-channel MOSFET power switches for power-distribution systems that require multiple power switches in a single package. Each switch is controlled by a logic enable input. Gate drive is provided by an internal charge pump designed to control the power-switch rise times and fall times to minimize current surges during switching. The charge pump requires no external components and allows operation from supplies as low as 2.7V.

Documents

Technical documentation and resources

No documents available