Discrete Semiconductor Products

GBU6M

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BRIDGE RECT 1PHASE 1KV 6A GBU

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Discrete Semiconductor Products

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BRIDGE RECT 1PHASE 1KV 6A GBU

Technical Specifications

Parameters and characteristics for this part

Specification	GBU6M

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-SIP, GBU
Supplier Device Package	GBU
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V
Voltage - Peak Reverse (Max) [Max]	1 kV

Part	Current - Average Rectified (Io)	Diode Type	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Voltage - Peak Reverse (Max) [Max]	Voltage - Peak Reverse (Max)
GeneSiC Semiconductor GBU6J	6 A	Single Phase	4-SIP GBU	1.1 V	GBU	5 µA	Standard	150 °C	-55 °C	Through Hole	600 V
GeneSiC Semiconductor GBU6D	6 A	Single Phase	4-SIP GBU	1.1 V	GBU	5 ÁA	Standard	150 °C	-55 °C	Through Hole		200 V
GeneSiC Semiconductor GBU6M	6 A	Single Phase	4-SIP GBU	1.1 V	GBU	5 µA	Standard	150 °C	-55 °C	Through Hole	1 kV
GeneSiC Semiconductor GBU6B	6 A	Single Phase	4-SIP GBU	1.1 V	GBU	5 µA	Standard	150 °C	-55 °C	Through Hole	100 V
GeneSiC Semiconductor GBU6A	6 A	Single Phase	4-SIP GBU	1.1 V	GBU	5 µA	Standard	150 °C	-55 °C	Through Hole	50 V
GeneSiC Semiconductor GBU6G	6 A	Single Phase	4-SIP GBU	1.1 V	GBU	5 µA	Standard	150 °C	-55 °C	Through Hole	400 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 1 kV Through Hole GBU

Technical documentation and resources