Discrete Semiconductor Products

SI7945DP-T1-E3

Obsolete

MOSFET 2P-CH 30V 7A PPAK SO8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 30V 7A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7945DP-T1-E3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	74 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Configuration	Supplier Device Package	Technology	Power - Max [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	FET Feature	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI7945DP-T1-GE3	2 P-Channel	PowerPAK® SO-8 Dual	MOSFET (Metal Oxide)	1.4 W	PowerPAK® SO-8 Dual	-55 °C	150 °C	30 V	20 mOhm	Surface Mount	Logic Level Gate	7 A	74 nC	3 V
Vishay General Semiconductor - Diodes Division SI7945DP-T1-E3	2 P-Channel	PowerPAK® SO-8 Dual	MOSFET (Metal Oxide)	1.4 W	PowerPAK® SO-8 Dual	-55 °C	150 °C	30 V	20 mOhm	Surface Mount	Logic Level Gate	7 A	74 nC	3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 7A 1.4W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources

No documents available