Discrete Semiconductor Products

PMPB15XPAX

Active

MOSFET P-CH 12V 8.2A DFN2020MD-6

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 12V 8.2A DFN2020MD-6

Technical Specifications

Parameters and characteristics for this part

Specification	PMPB15XPAX

Current - Continuous Drain (Id) @ 25°C	8.2 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2875 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	1.7 W, 12.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	Mounting Type	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Power Dissipation (Max)	Grade	Qualification	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
Freescale Semiconductor - NXP PMPB15XPAX	Surface Mount	6-UDFN Exposed Pad	DFN2020MD-6	12 V	-55 °C	150 °C	8.2 A	MOSFET (Metal Oxide)	12 V	1.7 W 12.5 W	Automotive	AEC-Q101	1 V	P-Channel	20 mOhm	1.8 V 4.5 V	100 nC	2875 pF
Freescale Semiconductor - NXP PMPB15XPZ	Surface Mount	6-UDFN Exposed Pad	DFN2020MD-6	12 V	-55 °C	150 °C	8.2 A	MOSFET (Metal Oxide)	12 V	1.7 W 12.5 W			900 mV	P-Channel		1.8 V 4.5 V	100 nC	2875 pF	19 mOhm
Freescale Semiconductor - NXP PMPB15XPH	Surface Mount	6-UDFN Exposed Pad	DFN2020MD-6	12 V	-55 °C	150 °C	8.2 A	MOSFET (Metal Oxide)	12 V	1.7 W 12.5 W			900 mV	P-Channel		1.8 V 4.5 V	100 nC	2875 pF	19 mOhm
Freescale Semiconductor - NXP PMPB15XP,115	Surface Mount	6-UDFN Exposed Pad	DFN2020MD-6	12 V	-55 °C	150 °C	8.2 A	MOSFET (Metal Oxide)	12 V	1.7 W 12.5 W			900 mV	P-Channel		1.8 V 4.5 V	100 nC	2875 pF	19 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 12 V 8.2A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6

Technical documentation and resources