SQJ910AEP-T2_GE3

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MOSFET 2N-CH 30V 30A PPAK SO8

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 30A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ910AEP-T2_GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1869 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max	48 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Configuration	Power - Max	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SQJ910AEP-T2_GE3	7 mOhm	PowerPAK® SO-8 Dual	30 A	PowerPAK® SO-8 Dual	2 N-Channel (Dual)	48 W	Automotive	39 nC	-55 °C	175 ░C	AEC-Q101	Surface Mount	30 V	2.5 V	MOSFET (Metal Oxide)	1869 pF

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General part information

Mosfet Array 30V 30A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources