Discrete Semiconductor Products

IRF640PBF-BE3

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MOSFET N-CH 200V 18A TO220AB

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Discrete Semiconductor Products

Active

MOSFET N-CH 200V 18A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRF640PBF-BE3

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division IRF640PBF-BE3	-55 °C	150 °C	1300 pF	MOSFET (Metal Oxide)	180 mOhm	TO-220-3	Through Hole	125 W	18 A	70 nC	200 V	4 V	20 V	TO-220AB	N-Channel	10 V
Vishay General Semiconductor - Diodes Division IRF640S	-55 °C	150 °C	1300 pF	MOSFET (Metal Oxide)	180 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	3.1 W 130 W	18 A	70 nC	200 V	4 V	20 V	TO-263 (D2PAK)	N-Channel	10 V
Vishay General Semiconductor - Diodes Division IRF640SPBF	-55 °C	150 °C	1300 pF	MOSFET (Metal Oxide)	180 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	3.1 W 130 W	18 A	70 nC	200 V	4 V	20 V	TO-263 (D2PAK)	N-Channel	10 V

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General part information

N-Channel 200 V 18A (Tc) 125W (Tc) Through Hole TO-220AB

Technical documentation and resources