Discrete Semiconductor Products

SQ3461EV-T1_GE3

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MOSFET P-CHANNEL 12V 8A 6TSOP

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Discrete Semiconductor Products

Active

MOSFET P-CHANNEL 12V 8A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SQ3461EV-T1_GE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Grade	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Power Dissipation (Max)	Package / Case
Vishay General Semiconductor - Diodes Division SQ3461EV-T1_GE3	28 nC	-55 °C	175 ░C	P-Channel	Automotive	25 mOhm	MOSFET (Metal Oxide)	6-TSOP	1.8 V 4.5 V	8 A	12 V	8 V	Surface Mount	1 V	2000 pF	AEC-Q101	5 W	SOT-23-6 Thin TSOT-23-6

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General part information

P-Channel 12 V 8A (Tc) 5W (Tc) Surface Mount 6-TSOP

Technical documentation and resources