Specification	MTD5P06VT4

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	510 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	2.1 W, 40 W
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	4 V

MTD5P06V Series

Power MOSFET -60V -5A 450 mOhm Single P-Channel DPAK

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [x]	Technology	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor MTD5P06VT4	5 A	2.1 W 40 W	Surface Mount	15 V	60 V	P-Channel	4 V	-55 °C	175 ░C	450 mOhm	10 V	20 nC	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	510 pF
ON Semiconductor MTD5P06VT4G	5 A	2.1 W 40 W	Surface Mount	15 V	60 V	P-Channel	4 V	-55 °C	175 ░C	450 mOhm	10 V	20 nC	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	510 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MTD5P06V Series

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.