Discrete Semiconductor Products

SI2312BDS-T1-GE3

LTB

MOSFET N-CH 20V 3.9A SOT23-3

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Discrete Semiconductor Products

LTB

MOSFET N-CH 20V 3.9A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI2312BDS-T1-GE3

Current - Continuous Drain (Id) @ 25°C	3.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	750 mW
Rds On (Max) @ Id, Vgs [Max]	31 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	850 mV

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI2312BDS-T1-GE3	8 V	31 mOhm	-55 °C	150 °C	Surface Mount	3.9 A	1.8 V 4.5 V	850 mV	SC-59 SOT-23-3 TO-236-3	12 nC	N-Channel	MOSFET (Metal Oxide)	750 mW	20 V	SOT-23-3 (TO-236)

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General part information

N-Channel 20 V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources