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3-XQFN
Discrete Semiconductor Products

PBSS3540MB,315

Active
Nexperia USA Inc.

40 V, 0.5 A PNP LOW VCESAT (BISS) TRANSISTOR

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3-XQFN
Discrete Semiconductor Products

PBSS3540MB,315

Active
Nexperia USA Inc.

40 V, 0.5 A PNP LOW VCESAT (BISS) TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS3540MB,315
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]200
Frequency - Transition300 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-XFDFN
Power - Max [Max]250 mW
QualificationAEC-Q100
Supplier Device PackageDFN1006B-3
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max) [Max]40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.22
10$ 0.15
100$ 0.07
500$ 0.06
1000$ 0.04
2000$ 0.04
5000$ 0.03
Digi-Reel® 1$ 0.22
10$ 0.15
100$ 0.07
500$ 0.06
1000$ 0.04
2000$ 0.04
5000$ 0.03
N/A 8344$ 0.31
Tape & Reel (TR) 10000$ 0.03

Description

General part information

PBSS3540 Series

PNP low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2540MB.