Integrated Circuits (ICs)

71T75802S100BGI8

Obsolete

Renesas Electronics Corporation

2.5V 1M X 18 ZBT SYNCHRONOUS 2.5V I/O PIPELINE SRAM

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Integrated Circuits (ICs)

71T75802S100BGI8

Obsolete

Renesas Electronics Corporation

2.5V 1M X 18 ZBT SYNCHRONOUS 2.5V I/O PIPELINE SRAM

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	71T75802S100BGI8

Access Time	5 ns
Clock Frequency	100 MHz
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	1M x 18
Memory Size	18 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	119-BGA
Supplier Device Package	119-PBGA (14x22)
Technology	SRAM - Synchronous, SDR (ZBT)
Voltage - Supply [Max]	2.625 V
Voltage - Supply [Min]	2.375 V

71T75802 Series

2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM

Part	Package / Case	Memory Interface	Memory Size	Memory Format	Clock Frequency	Memory Organization	Supplier Device Package	Memory Type	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Voltage - Supply [Min]	Voltage - Supply [Max]	Access Time
Renesas Electronics Corporation 71T75802S166PFG	100-LQFP	Parallel	18 Mbit	SRAM	166 MHz	1M x 18	100-TQFP (14x14)	Volatile	Surface Mount	70 °C	0 °C	SRAM - Synchronous SDR (ZBT)	2.375 V	2.625 V
Renesas Electronics Corporation 71T75802S150PFG	100-LQFP	Parallel	18 Mbit	SRAM	150 MHz	1M x 18	100-TQFP (14x14)	Volatile	Surface Mount	70 °C	0 °C	SRAM - Synchronous SDR (ZBT)	2.375 V	2.625 V	3.8 ns
Renesas Electronics Corporation 71T75802S100BGGI	119-BGA	Parallel	18 Mbit	SRAM	100 MHz	1M x 18	119-PBGA (14x22)	Volatile	Surface Mount	85 °C	-40 °C	SRAM - Synchronous SDR (ZBT)	2.375 V	2.625 V	5 ns
Renesas Electronics Corporation 71T75802S100BGI8	119-BGA	Parallel	18 Mbit	SRAM	100 MHz	1M x 18	119-PBGA (14x22)	Volatile	Surface Mount	85 °C	-40 °C	SRAM - Synchronous SDR (ZBT)	2.375 V	2.625 V	5 ns
Renesas Electronics Corporation 71T75802S200PFGI	100-LQFP	Parallel	18 Mbit	SRAM	200 MHz	1M x 18	100-TQFP (14x14)	Volatile	Surface Mount	85 °C	-40 °C	SRAM - Synchronous SDR (ZBT)	2.375 V	2.625 V	3.2 ns
Renesas Electronics Corporation 71T75802S200BGG8	119-BGA	Parallel	18 Mbit	SRAM	200 MHz	1M x 18	119-PBGA (14x22)	Volatile	Surface Mount	70 °C	0 °C	SRAM - Synchronous SDR (ZBT)	2.375 V	2.625 V	3.2 ns
Renesas Electronics Corporation 71T75802S150BGG8	119-BGA	Parallel	18 Mbit	SRAM	150 MHz	1M x 18	119-PBGA (14x22)	Volatile	Surface Mount	70 °C	0 °C	SRAM - Synchronous SDR (ZBT)	2.375 V	2.625 V	3.8 ns
Renesas Electronics Corporation 71T75802S166BGGI8	119-BGA	Parallel	18 Mbit	SRAM	166 MHz	1M x 18	119-PBGA (14x22)	Volatile	Surface Mount	85 °C	-40 °C	SRAM - Synchronous SDR (ZBT)	2.375 V	2.625 V
Renesas Electronics Corporation 71T75802S200BGGI8	119-BGA	Parallel	18 Mbit	SRAM	200 MHz	1M x 18	119-PBGA (14x22)	Volatile	Surface Mount	85 °C	-40 °C	SRAM - Synchronous SDR (ZBT)	2.375 V	2.625 V	3.2 ns
Renesas Electronics Corporation 71T75802S133BGGI	119-BGA	Parallel	18 Mbit	SRAM	133 MHz	1M x 18	119-PBGA (14x22)	Volatile	Surface Mount	85 °C	-40 °C	SRAM - Synchronous SDR (ZBT)	2.375 V	2.625 V	4.2 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

71T75802 Series

The 71T75802 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM, or Zero Bus Turnaround. The 71T75802 contains data I/O, address and control signal registers.

Documents

Technical documentation and resources