CSD16342Q5AT

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Discrete Semiconductor Products

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Technical Specifications

Parameters and characteristics for this part

Specification	CSD16342Q5AT

Current - Continuous Drain (Id) @ 25°C	100 A, 21 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	3 W
Rds On (Max) @ Id, Vgs	4.7 mOhm
Supplier Device Package	8-VSON (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1.1 V

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.5 mOhm

Part	Vgs (Max) [Max]	Vgs (Max) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology
Texas Instruments CSD16342Q5AT	10 V	-8 V	2.5 V	8 V	Surface Mount	21 A 100 A	4.7 mOhm	3 W	8-VSON (5x6)	-55 °C	150 °C	8-PowerTDFN	1350 pF	1.1 V	25 V	N-Channel	7.1 nC	MOSFET (Metal Oxide)
Texas Instruments CSD16342Q5A	10 V	-8 V	2.5 V	8 V	Surface Mount	100 A	4.7 mOhm	3 W	8-VSONP (5x6)	-55 °C	150 °C	8-PowerTDFN	1350 pF	1.1 V	25 V	N-Channel	7.1 nC	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.

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