Discrete Semiconductor Products

2SD2033AT114E

Obsolete

TRANS NPN 160V 1.5A HRT

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Discrete Semiconductor Products

Obsolete

TRANS NPN 160V 1.5A HRT

Technical Specifications

Parameters and characteristics for this part

Specification	2SD2033AT114E

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	HRT
Power - Max [Max]	1.8 W
Supplier Device Package	HRT
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2 V
Voltage - Collector Emitter Breakdown (Max)	160 V

Part	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Package / Case	Supplier Device Package	Current - Collector Cutoff (Max) [Max]
Rohm Semiconductor 2SD2033AT114E	2 V	160 V	150 °C	1.8 W	1.5 A	Through Hole	100	NPN	HRT	HRT	1 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.63

General part information

Bipolar (BJT) Transistor NPN 160 V 1.5 A 80MHz 1.8 W Through Hole HRT

Technical documentation and resources