Discrete Semiconductor Products

PSMN069-100YS,115

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PSMN069-100YS - N-CHANNEL LFPAK 100 V 72.4 MΩ STANDARD LEVEL MOSFET@EN-US SOIC 4-PIN

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Discrete Semiconductor Products

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PSMN069-100YS - N-CHANNEL LFPAK 100 V 72.4 MΩ STANDARD LEVEL MOSFET@EN-US SOIC 4-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN069-100YS,115

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	645 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	56 W
Rds On (Max) @ Id, Vgs	72.4 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Technology	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
Freescale Semiconductor - NXP PSMN069-100YS,115	72.4 mOhm	-55 °C	175 ░C	56 W	14 nC	10 V	645 pF	100 V	Surface Mount	SC-100 SOT-669	MOSFET (Metal Oxide)	LFPAK56 Power-SO8	N-Channel	17 A	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 17A (Tc) 56W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources