
BQ2201SN-NTR
ActiveBATTERY MONITORING BACK-UP MANAGEMENT 0.1MA 8-PIN SOIC T/R
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BQ2201SN-NTR
ActiveBATTERY MONITORING BACK-UP MANAGEMENT 0.1MA 8-PIN SOIC T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BQ2201SN-NTR |
|---|---|
| Controller Type | Nonvolatile SRAM |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply [Max] | 5.5 V |
| Voltage - Supply [Min] | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2500 | $ 3.25 | |
| Texas Instruments | LARGE T&R | 1 | $ 4.11 | |
| 100 | $ 3.35 | |||
| 250 | $ 2.63 | |||
| 1000 | $ 2.23 | |||
Description
General part information
BQ2201 Series
The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory.
A precision comparator monitors the 5V VCCinput for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM.
During a power failure, the external SRAM is switched from the VCCsupply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a power-valid condition exists.
Documents
Technical documentation and resources