Discrete Semiconductor Products

NSVMMUN2132LT1G-M01

Obsolete

TRANS PREBIAS PNP 50V SOT23-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PREBIAS PNP 50V SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	NSVMMUN2132LT1G-M01

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	15
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	246 mW
Qualification	AEC-Q101
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4700 Ohms
Supplier Device Package	SOT-23-3 (TO-236)
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Resistor - Emitter Base (R2)	Supplier Device Package	Power - Max [Max]	Resistor - Base (R1)	Current - Collector Cutoff (Max) [Max]	Qualification	Vce Saturation (Max) @ Ib, Ic	Grade	Package / Case
ON Semiconductor NSVMMUN2132LT1G-M01	PNP - Pre-Biased	15	Surface Mount	50 V	100 mA	4700 Ohms	SOT-23-3 (TO-236)	246 mW	4.7 kOhms	500 nA	AEC-Q101	250 mV	Automotive	SC-59 SOT-23-3 TO-236-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources

No documents available