Discrete Semiconductor Products

SI3853DV-T1-E3

Obsolete

MOSFET P-CH 20V 1.6A 6TSOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 1.6A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3853DV-T1-E3

Current - Continuous Drain (Id) @ 25°C	1.6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max) [Max]	830 mW
Rds On (Max) @ Id, Vgs [Max]	200 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	500 mV

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max) [Max]	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI3853DV-T1-E3	-55 °C	150 °C	2.5 V 4.5 V	MOSFET (Metal Oxide)	830 mW	Schottky Diode (Isolated)	4 nC	500 mV	200 mOhm	P-Channel	1.6 A	6-TSOP	20 V	Surface Mount	SOT-23-6 Thin TSOT-23-6	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 1.6A (Ta) 830mW (Ta) Surface Mount 6-TSOP

Technical documentation and resources