Specification	NTMFS2D5N08XT1G

Current - Continuous Drain (Id) @ 25°C	181 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	3800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max) [Max]	148 W
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

NTMFS2D5N08X Series

MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 2.1mΩ, 181 A

Part	Mounting Type	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case
ON Semiconductor NTMFS2D5N08XT1G	Surface Mount	148 W	-55 °C	175 ░C	N-Channel	5-DFN (5x6)	8-SOFL	6 V 10 V	181 A	MOSFET (Metal Oxide)	3.6 V	2.1 mOhm	53 nC	20 V	3800 pF	80 V	8-PowerTDFN 5 Leads

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 2.1mΩ, 181 A

Technical documentation and resources