Discrete Semiconductor Products

2N7002-CT

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MOSFET N-CH 60V 0.6A SOT-23

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Discrete Semiconductor Products

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MOSFET N-CH 60V 0.6A SOT-23

Technical Specifications

Parameters and characteristics for this part

Specification	2N7002-CT

Current - Continuous Drain (Id) (Ta)	600 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	4 nC
Input Capacitance (Ciss) (Max)	474 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23
Power Dissipation (Max)	1.3 W
Rds On (Max)	3 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1 V

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General part information

N-Channel 60 V 600mA (Ta) 1.3W (Ta) Surface Mount SOT-23

Technical documentation and resources