Discrete Semiconductor Products

SI4842BDY-T1-GE3

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MOSFET N-CH 30V 28A 8SO

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Discrete Semiconductor Products

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MOSFET N-CH 30V 28A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4842BDY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds	3650 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	6.25 W, 3 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI4842BDY-T1-GE3	3 W 6.25 W	-55 °C	150 °C	100 nC	8-SOIC	4.2 mOhm	20 V	N-Channel	3 V	MOSFET (Metal Oxide)	28 A	8-SOIC	3.9 mm	0.154 in	Surface Mount	30 V	4.5 V 10 V	3650 pF
Vishay General Semiconductor - Diodes Division SI4842BDY-T1-E3	3 W 6.25 W	-55 °C	150 °C	100 nC	8-SOIC	4.2 mOhm	20 V	N-Channel	3 V	MOSFET (Metal Oxide)	28 A	8-SOIC	3.9 mm	0.154 in	Surface Mount	30 V	4.5 V 10 V	3650 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 28A (Tc) 3W (Ta), 6.25W (Tc) Surface Mount 8-SOIC

Technical documentation and resources