Discrete Semiconductor Products

SQR40N10-25_GE3

NRND

MOSFET N-CH 100V 40A TO252 REV

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Discrete Semiconductor Products

NRND

MOSFET N-CH 100V 40A TO252 REV

Technical Specifications

Parameters and characteristics for this part

Specification	SQR40N10-25_GE3

Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Input Capacitance (Ciss) (Max) @ Vds	3380 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	DPAK (3 Leads + Tab)
Package / Case	TO-252-4
Power Dissipation (Max)	136 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	TO-252 (DPAK) Reverse Lead
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SQR40N10-25_GE3	2.5 V	-55 °C	175 ░C	70 nC	Surface Mount	MOSFET (Metal Oxide)	25 mOhm	20 V	136 W	TO-252 (DPAK) Reverse Lead	4.5 V 10 V	DPAK (3 Leads + Tab)	TO-252-4	N-Channel	3380 pF	100 V

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General part information

N-Channel 100 V 40A (Tc) 136W (Tc) Surface Mount TO-252 (DPAK) Reverse Lead

Technical documentation and resources