Discrete Semiconductor Products

BUK9Y53-100B,115

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MOSFET N-CH 100V 23A LFPAK56

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Discrete Semiconductor Products

Active

MOSFET N-CH 100V 23A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y53-100B,115

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2130 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	75 W
Qualification	AEC-Q101
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

Part	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Grade	Qualification	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type
Freescale Semiconductor - NXP BUK9Y53-100B,115	MOSFET (Metal Oxide)	75 W	23 A	Automotive	AEC-Q101	LFPAK56 Power-SO8	SC-100 SOT-669	2130 pF	Surface Mount	2 V	18 nC	4.5 V 10 V	-55 °C	175 ░C	100 V	15 V	N-Channel

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General part information

N-Channel 100 V 23A (Tc) 75W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources