Discrete Semiconductor Products

2SD1766T100Q

NRND

BIPOLAR TRANSISTORS - BJT NPN 32V 2A

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Discrete Semiconductor Products

NRND

BIPOLAR TRANSISTORS - BJT NPN 32V 2A

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1766T100Q

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Supplier Device Package	MPT3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	32 V

Part	Mounting Type	Transistor Type	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition
Rohm Semiconductor 2SD1766T100P	Surface Mount	NPN	1 µA	2 A	150 °C	MPT3	32 V	2 W	TO-243AA	800 mV	82 hFE	100 MHz
Rohm Semiconductor 2SD1766T100Q	Surface Mount	NPN	1 µA	2 A	150 °C	MPT3	32 V	2 W	TO-243AA	800 mV	120	100 MHz

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General part information

Bipolar (BJT) Transistor NPN 32 V 2 A 100MHz 2 W Surface Mount MPT3

Technical documentation and resources