GWS9294

Obsolete

MOSFET 2N-CH 20V 10.1A 4QFN

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 20V 10.1A 4QFN

Technical Specifications

Parameters and characteristics for this part

Specification	GWS9294

Configuration	2 N-Channel (Dual) Common Drain
Current - Continuous Drain (Id) @ 25°C	10.1 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-VDFN
Power - Max [Max]	3.6 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	4-QFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Configuration	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation GWS9294	10.1 A	MOSFET (Metal Oxide)	13 mOhm	1.5 V	4-VDFN	Surface Mount	3.6 W	11 nC	-55 °C	150 °C	4-QFN (2x2)	2 N-Channel (Dual) Common Drain	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 10.1A (Ta) 3.6W Surface Mount 4-QFN (2x2)

Technical documentation and resources