Discrete Semiconductor Products

PSMN4R4-80BS,118

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MOSFET N-CH 80V 100A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 80V 100A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN4R4-80BS,118

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	125 nC
Input Capacitance (Ciss) (Max) @ Vds	8400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	306 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Vgs(th) (Max) @ Id [Max]
Freescale Semiconductor - NXP PSMN4R4-80BS,118	10 V	N-Channel	D2PAK	4.5 mOhm	306 W	100 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	20 V	125 nC	8400 pF	80 V	MOSFET (Metal Oxide)	Surface Mount
Freescale Semiconductor - NXP PSMN4R4-80PS,127	10 V	N-Channel	TO-220AB	4.1 mOhm	306 W	100 A	TO-220-3	-55 °C	175 ░C	20 V	125 nC	8400 pF	80 V	MOSFET (Metal Oxide)	Through Hole
Freescale Semiconductor - NXP PSMN4R4-30MLC,115	4.5 V 10 V	N-Channel	LFPAK33	4.65 mOhm		70 A		-55 °C	175 ░C	20 V	23 nC	1515 pF	30 V	MOSFET (Metal Oxide)	Surface Mount	2.15 V

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General part information

N-Channel 80 V 100A (Tc) 306W (Tc) Surface Mount D2PAK

Technical documentation and resources