Discrete Semiconductor Products

PSMN034-100BS,118

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MOSFET N-CH 100V 32A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 100V 32A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN034-100BS,118

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23.8 nC
Input Capacitance (Ciss) (Max) @ Vds	1201 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	86 W
Rds On (Max) @ Id, Vgs [Max]	34.5 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C
Freescale Semiconductor - NXP PSMN034-100BS,118	1201 pF	MOSFET (Metal Oxide)	23.8 nC	-55 °C	175 ░C	100 V	34.5 mOhm	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	10 V	86 W	20 V	N-Channel	32 A
Freescale Semiconductor - NXP PSMN034-100PS,127	1201 pF	MOSFET (Metal Oxide)	23.8 nC	-55 °C	175 ░C	100 V	34.5 mOhm	TO-220AB	TO-220-3	Through Hole	10 V	86 W	20 V	N-Channel	32 A

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General part information

N-Channel 100 V 32A (Tc) 86W (Tc) Surface Mount D2PAK

Technical documentation and resources