Discrete Semiconductor Products

SI6544BDQ-T1-E3

Obsolete

MOSFET N/P-CH 30V 3.7A 8TSSOP

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 30V 3.7A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6544BDQ-T1-E3

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	3.8 A
Current - Continuous Drain (Id) (Typical)	3.7 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Max)	15 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.173 in
Package Name	8-TSSOP
Package Width	4.4 mm
Power - Max	830 mW
Rds On (Max)	43 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	3 V

Part	Vgs(th) (Max)	Power - Max	Rds On (Max)	Technology	Package Name	Configuration	Package Length	Package Width	FET Feature	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Maximum)	Current - Continuous Drain (Id) (Typical)	Mounting Type
Vishay Dale SI6544BDQ-T1-E3	3 V	830 mW	43 mOhm	MOSFET (Metal Oxide)	8-TSSOP	N P-Channel	0.173 in	4.4 mm	Logic Level Gate	15 nC	30 V	-55 °C	150 °C	3.8 A	3.7 A	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

Mosfet Array 30V 3.7A, 3.8A 830mW Surface Mount 8-TSSOP

Technical documentation and resources

No documents available