Discrete Semiconductor Products

SI6544BDQ-T1-E3

Obsolete

MOSFET N/P-CH 30V 3.7A 8TSSOP

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 30V 3.7A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6544BDQ-T1-E3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3.7 A, 3.8 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	15 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power - Max [Max]	830 mW
Rds On (Max) @ Id, Vgs [Max]	43 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Feature	Package / Case	Package / Case [custom]	Package / Case [custom]	Power - Max [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Configuration	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI6544BDQ-T1-E3	30 V	Surface Mount	MOSFET (Metal Oxide)	15 nC	Logic Level Gate	8-TSSOP	0.173 "	4.4 mm	830 mW	8-TSSOP	3.7 A 3.8 A	N and P-Channel	43 mOhm	3 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 3.7A, 3.8A 830mW Surface Mount 8-TSSOP

Technical documentation and resources

No documents available