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Axial
Discrete Semiconductor Products

AP01C

Active
Sanken Electric USA Inc.

DIODE GEN PURP 1KV 200MA AXIAL

Axial
Discrete Semiconductor Products

AP01C

Active
Sanken Electric USA Inc.

DIODE GEN PURP 1KV 200MA AXIAL

Technical Specifications

Parameters and characteristics for this part

SpecificationAP01C
Current - Average Rectified (Io)200 mA
Current - Reverse Leakage100 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)150 °C
Operating Temperature - Junction (Min)-40 °C
Package / CaseAxial
Reverse Recovery Time (trr)200 ns
SpeedAny Speed, Small Signal
Speed - Fast Recovery (Maximum)200 mA
Speed - Small Signal Current Max200 mA, 200 mA, 200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)1 kV
Voltage - Forward (Vf) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBulk 1000$ 0.38<4d

CAD

3D models and CAD resources for this part

Description

General part information

AP01 Series

Diode 1000 V 200mA Through Hole

Documents

Technical documentation and resources