Discrete Semiconductor Products

SIDR870ADP-T1-GE3

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MOSFET N-CH 100V 95A PPAK SO-8DC

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Discrete Semiconductor Products

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MOSFET N-CH 100V 95A PPAK SO-8DC

Technical Specifications

Parameters and characteristics for this part

Specification	SIDR870ADP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	95 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	6.6 mOhm
Supplier Device Package	PowerPAK® SO-8DC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type
Vishay General Semiconductor - Diodes Division SIDR870ADP-T1-GE3	Surface Mount	PowerPAK® SO-8DC	6.6 mOhm	80 nC	3 V	MOSFET (Metal Oxide)	4.5 V 10 V	-55 °C	150 °C	20 V	100 V	125 W	PowerPAK® SO-8	95 A	N-Channel

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General part information

N-Channel 100 V 95A (Tc) 125W (Tc) Surface Mount PowerPAK® SO-8DC

Technical documentation and resources