Discrete Semiconductor Products

AOT190A60CL

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MOSFET N-CH 600V 20A TO220

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Discrete Semiconductor Products

Active

MOSFET N-CH 600V 20A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT190A60CL

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	34 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1935 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	208 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.6 V

Part	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)
Alpha & Omega Semiconductor Inc. AOT190A60CL	30 V	TO-220-3	20 A	10 V	208 W	TO-220	N-Channel	1935 pF	MOSFET (Metal Oxide)	Through Hole	150 °C	-55 °C	190 mOhm	4.6 V	34 nC	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 20A (Tc) 208W (Tc) Through Hole TO-220

Technical documentation and resources