Discrete Semiconductor Products

BY458TR

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DIODE AVALANCHE 1.2KV 2A SOD57

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Discrete Semiconductor Products

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DIODE AVALANCHE 1.2KV 2A SOD57

Technical Specifications

Parameters and characteristics for this part

Specification	BY458TR

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	3 µA
Mounting Type	Through Hole
Operating Temperature - Junction	140 °C
Package / Case	SOD-57, Axial
Reverse Recovery Time (trr)	2 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SOD-57
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Speed	Speed	Technology	Operating Temperature - Junction	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division BY458TR	1.6 V	Through Hole	Axial SOD-57	1.2 kV	SOD-57	Standard Recovery >500ns	200 mA	Avalanche	140 °C	2 A	2 µs	3 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	25000	$ 0.21

General part information

Diode 1200 V 2A Through Hole SOD-57

Technical documentation and resources