Discrete Semiconductor Products

ES1GWG_R1_00001

NRND

DIODE GEN PURP 400V 1A SMA

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Discrete Semiconductor Products

NRND

DIODE GEN PURP 400V 1A SMA

Technical Specifications

Parameters and characteristics for this part

Specification	ES1GWG_R1_00001

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	35 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Speed	Technology	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Capacitance @ Vr, F
Panjit International Inc. ES1GWG_R1_00001	400 V	DO-214AC (SMA)	1 A	35 ns	1 µA	Surface Mount	1.25 V	200 mA 500 ns	Standard	DO-214AC SMA	-55 °C	150 °C
Panjit International Inc. ES1G_R1_00001	400 V	DO-214AC (SMA)	1 A	35 ns	1 µA	Surface Mount	1.25 V	200 mA 500 ns	Standard	DO-214AC SMA	-55 °C	150 °C	7 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 1A Surface Mount DO-214AC (SMA)

Technical documentation and resources

No documents available