Discrete Semiconductor Products

PUMF12,115

Obsolete

PUMF12 - PNP GENERAL PURPOSE TRANSISTOR; NPN RESISTOR-EQUIPPED TRANSISTOR TSSOP 6-PIN

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Discrete Semiconductor Products

Obsolete

PUMF12 - PNP GENERAL PURPOSE TRANSISTOR; NPN RESISTOR-EQUIPPED TRANSISTOR TSSOP 6-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	PUMF12,115

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 hFE, 120
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	300 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	6-TSSOP
Transistor Type	1 NPN Pre-Biased, 1 PNP
Vce Saturation (Max) @ Ib, Ic	150 mV, 200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V
Voltage - Collector Emitter Breakdown (Max) [Min]	40 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Min]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce	Mounting Type	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Resistor - Emitter Base (R2)	Resistor - Base (R1)	Frequency - Transition	Transistor Type	Power - Max [Max]
Freescale Semiconductor - NXP PUMF12,115	50 V	40 V	100 mA	1 µA	6-TSSOP SC-88 SOT-363	80 hFE 120	Surface Mount	6-TSSOP	150 mV 200 mV	47000 Ohms	22 kOhms	100 MHz	1 NPN Pre-Biased 1 PNP	300 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA 100MHz 300mW Surface Mount 6-TSSOP

Technical documentation and resources