Discrete Semiconductor Products

PUMF12,115

Obsolete

TRANS PREBIAS 1NPN 1PNP 6TSSOP

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Discrete Semiconductor Products

Obsolete

TRANS PREBIAS 1NPN 1PNP 6TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PUMF12,115

Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	1 µA
DC Current Gain (hFE) (Min)	80, 120
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
NPN Count	1
Package / Case	6-TSSOP, SC-88, SOT-363
Package Name	6-TSSOP
PNP Count	1
Power - Max	300 mW
Resistor - Base (R1) Resistance	22 kOhm
Resistor - Emitter Base (R2)	47 kOhm
Transistor Configuration	Pre-Biased
Transistor Type	NPN, PNP
Vce Saturation (Max)	150 mV, 200 mV
Voltage - Collector Emitter Breakdown (Max) (Value 1)	50 V
Voltage - Collector Emitter Breakdown (Max) (Value 2)	40 V

Part	Current - Collector Cutoff (Max)	NPN Count	Transistor Type	Transistor Configuration	PNP Count	DC Current Gain (hFE) (Min)	Vce Saturation (Max)	Frequency - Transition	Resistor - Emitter Base (R2)	Voltage - Collector Emitter Breakdown (Max) (Value 2)	Voltage - Collector Emitter Breakdown (Max) (Value 1)	Power - Max	Mounting Type	Package / Case	Resistor - Base (R1) Resistance	Package Name	Current - Collector (Ic) (Max)
Nexperia USA Inc. PUMF12,115	1 µA	1	NPN PNP	Pre-Biased	1	80 120	150 mV 200 mV	100 MHz	47 kOhm	40 V	50 V	300 mW	Surface Mount	6-TSSOP SC-88 SOT-363	22 kOhm	6-TSSOP	0.1 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA 100MHz 300mW Surface Mount 6-TSSOP

Technical documentation and resources