Discrete Semiconductor Products

SUP65P04-15-E3

Obsolete

MOSFET P-CH 40V 65A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 40V 65A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP65P04-15-E3

Current - Continuous Drain (Id) (Tc)	65 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	130 nC
Input Capacitance (Ciss) (Max)	5400 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	3.75 W, 120 W
Rds On (Max)	15 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Vgs (Max)	Gate Charge (Max)	Power Dissipation (Max)	Package Name	FET Type	Technology
Vishay Dale SUP65P04-15-E3	10 V	4.5 V	40 V	-55 °C	175 °C	TO-220-3	3 V	5400 pF	Through Hole	65 A	15 mOhm	20 V	130 nC	3.75 W 120 W	TO-220AB	P-Channel	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

P-Channel 40 V 65A (Tc) 3.75W (Ta), 120W (Tc) Through Hole TO-220AB

Technical documentation and resources