Discrete Semiconductor Products

SISH472DN-T1-GE3

Active

MOSFET N-CH 30V 15A/20A PPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 30V 15A/20A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISH472DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	15 A, 20 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	997 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8SH
Power Dissipation (Max)	28 W, 3.5 W
Rds On (Max) @ Id, Vgs	8.9 mOhm
Supplier Device Package	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	Package / Case	FET Type
Vishay General Semiconductor - Diodes Division SISH472DN-T1-GE3	MOSFET (Metal Oxide)	15 A 20 A	Surface Mount	997 pF	-55 °C	150 °C	2.5 V	30 nC	PowerPAK® 1212-8SH	8.9 mOhm	4.5 V 10 V	30 V	20 V	3.5 W 28 W	PowerPAK® 1212-8SH	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 15A (Ta), 20A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount PowerPAK® 1212-8SH

Technical documentation and resources