Discrete Semiconductor Products

VS-RA160FA120

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DIODE MODULE GP 1200V 91A SOT227

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Discrete Semiconductor Products

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DIODE MODULE GP 1200V 91A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	VS-RA160FA120

Current - Average Rectified (Io) (per Diode)	91 A
Current - Reverse Leakage @ Vr	150 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SOT-227
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.27 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Speed	Speed
Vishay General Semiconductor - Diodes Division VS-RA160FA120	150 °C	-55 °C	Chassis Mount	Standard	1.27 V	150 µA	2 Independent	91 A	SOT-227-4 miniBLOC	1.2 kV	SOT-227	Standard Recovery >500ns	200 mA

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General part information

Diode Array 2 Independent 1200 V 91A Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources