NGW60T65M3DFPQ
Active650 V, 60 A TRENCH FIELD-STOP IGBT WITH FULL RATED SILICON DIODE
Deep-Dive with AI
Search across all available documentation for this part.
NGW60T65M3DFPQ
Active650 V, 60 A TRENCH FIELD-STOP IGBT WITH FULL RATED SILICON DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | NGW60T65M3DFPQ |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 180 A |
| Gate Charge | 217 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 431 W |
| Reverse Recovery Time (trr) | 102 ns |
| Supplier Device Package | TO-247-3L |
| Switching Energy | 930 µJ, 1.91 mJ |
| Td (on/off) @ 25°C | 36 ns, 270 ns |
| Test Condition | 10 Ohm, 15 V, 400 V, 60 A |
| Vce(on) (Max) @ Vge, Ic | 1.9 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 240 | $ 7.44 | |
Description
General part information
NGW60T65M3DFP Series
The NGW60T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard-switching 650 V, 60 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
Documents
Technical documentation and resources