Specification	SSM6N39TU,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	1.6 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds	260 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	119 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

SSM6N39TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 1.6 A, 0.119 Ω@4V, SOT-363F(UF6)

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Operating Temperature	Configuration	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage SSM6N39TU,LF	260 pF	7.5 nC	500 mW	150 °C	2 N-Channel (Dual)	MOSFET (Metal Oxide)	119 mOhm	UF6	6-SMD Flat Leads	Surface Mount	1 V	1.6 A	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1999	$ 0.61

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 1.6 A, 0.119 Ω@4V, SOT-363F(UF6)

Technical documentation and resources