Deep-Dive with AI
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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SI7911DN-T1-E3 |
|---|---|
| Channel Count | 2 |
| Configuration | P-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 4.2 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 15 nC |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 Dual |
| Package Name | PowerPAK® 1212-8 Dual |
| Power - Max | 1.3 W |
| Rds On (Max) | 51 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
CAD
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Description
General part information
SI7911 Series
Mosfet Array 20V 4.2A 1.3W Surface Mount PowerPAK® 1212-8 Dual
Documents
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