Discrete Semiconductor Products

SI7911DN-T1-E3

Obsolete

MOSFET 2P-CH 20V 4.2A 1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 20V 4.2A 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7911DN-T1-E3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.2 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Rds On (Max) @ Id, Vgs [Max]	51 mOhm
Supplier Device Package	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Configuration	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI7911DN-T1-E3	15 nC	Logic Level Gate	4.2 A	MOSFET (Metal Oxide)	Surface Mount	2 P-Channel	51 mOhm	20 V	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 4.2A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Technical documentation and resources

No documents available