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ISL9N302AS3
Discrete Semiconductor Products

IRFU5410PBF

Active
INFINEON

POWER MOSFET, P CHANNEL, 100 V, 13 A, 0.205 OHM, TO-251AA, THROUGH HOLE

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ISL9N302AS3
Discrete Semiconductor Products

IRFU5410PBF

Active
INFINEON

POWER MOSFET, P CHANNEL, 100 V, 13 A, 0.205 OHM, TO-251AA, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFU5410PBF
Current - Continuous Drain (Id) @ 25°C13 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]58 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)66 W
Rds On (Max) @ Id, Vgs205 mOhm
Supplier Device PackageIPAK (TO-251AA)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 532$ 0.56
532$ 0.56
N/A 2460$ 1.90
2460$ 1.90
281224$ 0.83
281224$ 0.83
Tube 1$ 1.30
1$ 1.30
75$ 1.05
75$ 1.05
150$ 0.83
150$ 0.83
525$ 0.70
525$ 0.70
1050$ 0.57
1050$ 0.57
2025$ 0.54
2025$ 0.54
5025$ 0.51
5025$ 0.51
10050$ 0.49
10050$ 0.49
NewarkEach 1$ 1.65
1$ 1.65
10$ 0.68
10$ 0.68
100$ 0.63
100$ 0.63
500$ 0.57
500$ 0.57
1000$ 0.52
1000$ 0.52
2500$ 0.51
2500$ 0.51
12000$ 0.51
12000$ 0.51

Description

General part information

IRFU5410 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.