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PG-TDSON-8-1
Discrete Semiconductor Products

BSC360N15NS3GATMA1

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INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; SUPERSO8 5X6 PACKAGE; 36 MOHM;

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PG-TDSON-8-1
Discrete Semiconductor Products

BSC360N15NS3GATMA1

Active
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; SUPERSO8 5X6 PACKAGE; 36 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC360N15NS3GATMA1
Current - Continuous Drain (Id) @ 25°C33 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1190 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)74 W
Rds On (Max) @ Id, Vgs [Max]36 mOhm
Supplier Device PackagePG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.51
10$ 1.62
100$ 1.11
500$ 0.89
1000$ 0.82
2000$ 0.76
Digi-Reel® 1$ 2.51
10$ 1.62
100$ 1.11
500$ 0.89
1000$ 0.82
2000$ 0.76
N/A 9020$ 2.39
Tape & Reel (TR) 5000$ 0.74
NewarkEach (Supplied on Cut Tape) 1$ 2.00
10$ 1.38
25$ 1.29
50$ 1.20
100$ 1.10
250$ 1.01
500$ 0.92
1000$ 0.91

Description

General part information

BSC360 Series

The 150 V OptiMOS™ achieves a reduction in RDS(on)of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Documents

Technical documentation and resources