Discrete Semiconductor Products

SIB800EDK-T1-GE3

Obsolete

MOSFET N-CH 20V 1.5A PPAK SC75-6

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 1.5A PPAK SC75-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIB800EDK-T1-GE3

Current - Continuous Drain (Id) (Tc)	1.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Max)	1.7 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-75-6
Package Name	PowerPAK® SC-75-6
Power Dissipation (Max)	1.1 W, 3.1 W
Rds On (Max)	225 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	6 V
Vgs(th) (Max)	1 V

Part	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max)	Package / Case	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Power Dissipation (Max)	Gate Charge (Max)
Vishay Dale SIB800EDK-T1-GE3	-55 °C	150 °C	Surface Mount	PowerPAK® SC-75-6	4.5 V	1.5 V	6 V	N-Channel	Schottky Diode (Isolated)	20 V	MOSFET (Metal Oxide)	1 V	PowerPAK® SC-75-6	1.5 A	225 mOhm	1.1 W 3.1 W	1.7 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.27	1m+

3D models and CAD resources for this part

General part information

N-Channel 20 V 1.5A (Tc) 1.1W (Ta), 3.1W (Tc) Surface Mount PowerPAK® SC-75-6

Technical documentation and resources

No documents available