Discrete Semiconductor Products

IGW03N120H2FKSA1

Obsolete

IGBT 1200V 9.6A 62.5W TO247-3

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Discrete Semiconductor Products

Obsolete

IGBT 1200V 9.6A 62.5W TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IGW03N120H2FKSA1

Current - Collector (Ic) (Max) [Max]	9.6 A
Current - Collector Pulsed (Icm)	9.9 A
Gate Charge	22 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	62.5 W
Supplier Device Package	PG-TO247-3-1
Switching Energy	290 µJ
Td (on/off) @ 25°C [Max] [custom]	281 ns
Td (on/off) @ 25°C [Min] [custom]	9.2 ns
Test Condition	82 Ohm, 3 A, 800 V, 15 V
Vce(on) (Max) @ Vge, Ic	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Test Condition	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Switching Energy	Td (on/off) @ 25°C [Max] [custom]	Td (on/off) @ 25°C [Min] [custom]	Supplier Device Package	Mounting Type	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Gate Charge	Power - Max [Max]	Package / Case
INFINEON IGW03N120H2FKSA1	3 A 15 V 82 Ohm 800 V	2.8 V	1200 V	-40 °C	150 °C	290 µJ	281 ns	9.2 ns	PG-TO247-3-1	Through Hole	9.6 A	9.9 A	22 nC	62.5 W	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 1200 V 9.6 A 62.5 W Through Hole PG-TO247-3-1

Technical documentation and resources