Discrete Semiconductor Products
TPWR6003PL,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.0006 Ω@10V, DSOP ADVANCE, U-MOSⅨ-H
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Discrete Semiconductor Products
TPWR6003PL,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.0006 Ω@10V, DSOP ADVANCE, U-MOSⅨ-H
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Technical Specifications
Parameters and characteristics for this part
| Specification | TPWR6003PL,L1Q |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 150 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 960 mW, 170 W |
| Rds On (Max) @ Id, Vgs | 0.6 mOhm |
| Supplier Device Package | 8-DSOP Advance |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 9904 | $ 3.80 | |
Description
General part information
TPWR6003PL Series
12V - 300V MOSFETs, N-ch MOSFET, 30 V, 0.0006 Ω@10V, DSOP Advance, U-MOSⅨ-H
Documents
Technical documentation and resources