Discrete Semiconductor Products
IPB019N08N3GATMA1
ActiveINFINEON
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 1.9 MOHM;
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Discrete Semiconductor Products
IPB019N08N3GATMA1
ActiveINFINEON
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 1.9 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB019N08N3GATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 6 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 206 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 14200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) @ Id, Vgs | 1.9 mOhm |
| Supplier Device Package | PG-TO263-7 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB019 Series
The IPB019N08N3 G is an OptiMOS™ 3 N-channel Power Transistor with superior thermal resistance, excellent gate charge x R DS (ON) product (FOM) and dual-sided cooling. Optimized technology for DC/DC converters.