Discrete Semiconductor Products

IPB06P001LATMA1

Obsolete

MOSFET P-CH 60V 100A TO263-3

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 100A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPB06P001LATMA1

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	281 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	300 W
Rds On (Max) @ Id, Vgs	11 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
INFINEON IPB06P001LATMA1	MOSFET (Metal Oxide)	11 mOhm	175 °C	-55 °C	P-Channel	100 A	8500 pF	281 nC	300 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	60 V	4.5 V 10 V	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.13

General part information

P-Channel 60 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources