Discrete Semiconductor Products

80EPS08

Obsolete

DIODE GEN PURP 800V 80A TO247AC

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 800V 80A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	80EPS08

Current - Average Rectified (Io)	80 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-3
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-247AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.17 V

Part	Speed	Speed	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Technology	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Mounting Type
Vishay General Semiconductor - Diodes Division 80EPS08	Standard Recovery >500ns	200 mA	80 A	100 µA	1.17 V	Standard	TO-247-3	150 °C	-40 °C	800 V	TO-247AC	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 800 V 80A Through Hole TO-247AC

Technical documentation and resources