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GPI4TIC15DFV
Integrated Circuits (ICs)

GPI4TIC15DFV

Active
GaNPower

RF MOSFET 6.5V 8DFN

GPI4TIC15DFV
Integrated Circuits (ICs)

GPI4TIC15DFV

Active
GaNPower

RF MOSFET 6.5V 8DFN

Technical Specifications

Parameters and characteristics for this part

SpecificationGPI4TIC15DFV
Channel TypeSingle
Driven ConfigurationLow-Side
Fall Time (Typ)70 ns
Gate TypeGaN FET
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-WDFN Exposed Pad
Package Length8 mm
Package Name8-DFN
Package Width8 mm
Rise Time (Typ)30 ns
Voltage - Supply (Maximum)8 V
Voltage - Supply (Minimum)5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTube 1$ 8.25<6d

CAD

3D models and CAD resources for this part

Description

General part information

GPI4TIC15DFV

RF MOSFET 6.5V 8DFN

Documents

Technical documentation and resources