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GPI4TIC15DFV
Integrated Circuits (ICs)

GPI4TIC15DFV

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GaNPower

RF MOSFET 6.5V 8DFN

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GPI4TIC15DFV
Integrated Circuits (ICs)

GPI4TIC15DFV

Active
GaNPower

RF MOSFET 6.5V 8DFN

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationGPI4TIC15DFV
Channel TypeSingle
Driven ConfigurationLow-Side
Fall Time (Typ)70 ns
Gate TypeGaN FET
Input TypeNon-Inverting
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-WDFN Exposed Pad
Package Length8 mm
Package Name8-DFN
Package Width8 mm
Rise Time (Typ)30 ns
Voltage - Supply (Maximum)8 V
Voltage - Supply (Minimum)5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTube 1$ 8.25<2d

CAD

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Description

General part information

GPI4TIC15DFV

RF MOSFET 6.5V 8DFN

Documents

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