Discrete Semiconductor Products

PHB29N08T,118

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MOSFET N-CH 75V 27A D2PAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 75V 27A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHB29N08T,118

Current - Continuous Drain (Id) @ 25°C	27 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	11 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	810 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	88 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id [Max]	5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]	Supplier Device Package
Freescale Semiconductor - NXP PHB29N08T,118	810 pF	N-Channel	MOSFET (Metal Oxide)	19 nC	88 W	27 A	30 V	75 V	Surface Mount	-55 °C	175 ░C	11 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	50 mOhm	5 V	D2PAK

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General part information

N-Channel 75 V 27A (Tc) 88W (Tc) Surface Mount D2PAK

Technical documentation and resources