Discrete Semiconductor Products

PHB29N08T,118

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Nexperia USA Inc.

N-CHANNEL TRENCHMOS STANDARD LEVEL FET

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DocumentsRC Thermal Models Designing RC Snubbers +19

Discrete Semiconductor Products

PHB29N08T,118

Active

Nexperia USA Inc.

N-CHANNEL TRENCHMOS STANDARD LEVEL FET

Deep-Dive with AI

DocumentsRC Thermal Models Designing RC Snubbers +19

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PHB29N08T,118

Current - Continuous Drain (Id) @ 25°C	27 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	11 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	810 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	88 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

PHB29N08T Series

N-channel TrenchMOS standard level FET

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Mounting Type	FET Type
Nexperia USA Inc. PHB29N08T,118	5 V	50 mOhm	30 V	88 W	75 V	19 nC	11 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	810 pF	27 A	175 °C	-55 °C	D2PAK	Surface Mount	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.17
		10	$ 0.96
		100	$ 0.74
	Digi-Reel®	1	$ 1.17
		10	$ 0.96
		100	$ 0.74
	N/A	2192	$ 2.24
	Tape & Reel (TR)	800	$ 0.55
		1600	$ 0.51
		2400	$ 0.48
		4000	$ 0.46
		5600	$ 0.45

Description

General part information

PHB29N08T Series

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.